IRF730 STMicroelectronics, IRF730 Datasheet - Page 3

• Manufacturer Part Number: IRF730
• Description: MOSFET N-CH 400V 5.5A TO-220
• Manufacturer: STMicroelectronics

Specifications of IRF730

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 530pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2736-5

IRF730
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2. I
Table 2.
Table 3.
Rthj-case Thermal resistance junction-case max
Rthc-sink Thermal resistance case-sink typ
Rthj-amb Thermal resistance junction-ambient max
Symbol
Symbol
dv/dt
I
V
DM
P
V
SD
E
V
T
I
DGR
I
I
TOT
T
AR
T
GS
DS
stg
AS
D
D
l
j
≤ 5.5A, di/dt ≤ 90A/µs, V
(1)
(2)
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuos) at T
Drain current (continuos) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
= 25 °C, I
DD
≤ V
Parameter
Parameter
(BR)DSS,
C
D
GS
= 25°C
= I
GS
j
= 20 kΩ)
max)
AR
= 0)
Tj ≤ T
, V
C
C
DD
jmax
= 25°C
= 100°C
= 50V)
.
Max Value
–65 to 150
Value
1.25
± 20
62.5
400
400
100
150
300
300
3.5
0.8
0.5
5.5
5.5
22
3
Electrical ratings
W/°C
°C/W
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
°C
W
V
V
V
A
A
A
A
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