IRF830 STMicroelectronics, IRF830 Datasheet - Page 3

• Manufacturer Part Number: IRF830
• Description: MOSFET N-CH 500V 4.5A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of IRF830

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 610pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2732-5

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
Symbol
Symbol
V
I
t
SDM
t
I
r(Voff)
SD
Q
Q
d(on)
I
Q
RRM
Q
t
SD
t
t
t
rr
gd
c
r
gs
f
rr
g
( )
( )
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
G
G
= 4.7
= 4.7
= 4.5 A
= 4.5 A
= 250 V
= 400 V
= 400 V I
= 100 V
Test Conditions
Test Conditions
Test Conditions
V
di/dt = 100 A/ s
V
GS
I
I
D
GS
V
D
D
T
= 3 A V
GS
j
= 2.9 A
= 4.5 A
= 10 V
= 0
= 150
Thermal Impedance
= 10 V
o
GS
C
= 10 V
Min.
Min.
Min.
Typ.
11.5
Typ.
Typ.
435
7.2
3.3
22
15
15
8
8
7
5
Max.
Max.
Max.
4.5
1.6
30
18
IRF830
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
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