IRF830 STMicroelectronics, IRF830 Datasheet
IRF830
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IRF830 Summary of contents
Page 1
... Pulse width limited by safe operating area First Digit of the Datecode Being Identifies Silicon Characterized in this Datasheet August 1998 PowerMESH I DS(on) D 4.5 A INTERNAL SCHEMATIC DIAGRAM Parameter = 100 4.5A, di/ IRF830 - 4.5A - TO-220 MOSFET TO-220 Value Unit 500 V 500 4 100 W o 0.8 W/ 3.5 V/ns o -65 to 150 C ...
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... IRF830 THERMAL DATA R Thermal Resistance Junction-case thj-case Thermal Resistance Junction-ambient Rthj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T OFF Symbol ...
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... V = 400 Test Conditions V = 400 4 4 (see test circuit, figure 5) Test Conditions 4.5 A di/dt = 100 100 150 (see test circuit, figure 5) Thermal Impedance IRF830 Min. Typ. Max. Unit 11 7 Min. Typ. Max. Unit Min. Typ. Max. Unit 4 1.6 V 435 ns 3 3/8 ...
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... IRF830 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...
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... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature IRF830 5/8 ...
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... IRF830 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 1: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...
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... IRF830 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 P011C ...
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... IRF830 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...