STW8NB100 STMicroelectronics, STW8NB100 Datasheet - Page 3

• Manufacturer Part Number: STW8NB100
• Description: MOSFET N-CH 1KV 7.3A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW8NB100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.45 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2646-5

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
I
V
SDM
t
t
I
SD
r(Voff)
Q
d(on)
Q
RRM
I
Q
2. Pulse width limited by safe operating area.
Q
SD
t
t
t
t
rr
gs
gd
c
r
f
rr
g
(1)
(2)
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
V
R
(see test circuit, Figure 3)
V
V
V
R
(see test circuit, Figure 5)
I
I
V
(see test circuit, Figure 5)
SD
SD
DD
DD
GS
DD
G
DD
G
= 4.7 , V
= 4.7
= 7.3 A, V
= 7 A, di/dt = 100 A/µs,
= 500V, I
= 800V, I
= 10V, R
= 100V, T
= 800V, I
Test Conditions
Test Conditions
Test Conditions
V
GS
GS
G
D
D
D
GS
j
= 4.7
= 150°C
= 3.5 A
= 7 A,
= 7 A,
= 10V
= 10V
= 0
Thermal Impedance
Min.
Min.
Min.
1000
Typ.
31.5
Typ.
10.8
21.5
Typ.
32
13
68
16
32
32
40
Max.
Max.
Max.
7.3
1.6
STW8NB100
95
29
Unit
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
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