STW8NB100 STMicroelectronics, STW8NB100 Datasheet - Page 2

• Manufacturer Part Number: STW8NB100
• Description: MOSFET N-CH 1KV 7.3A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STW8NB100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.45 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2646-5

STW8NB100
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
2/8
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
I
C
I
E
DS(on)
C
GS(th)
C
I
DSS
GSS
g
AR
T
oss
AS
rss
iss
fs
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
AR
max)
Parameter
, V
DD
I
V
V
V
V
V
V
I
D
D
V
= 100 V)
DS
DS
GS
DS
GS
DS
DS
= 250 µA, V
= 3.6 A
= Max Rating
= Max Rating, T
= ±30V
= V
= 10V, I
> I
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
D
x R
D
= 3.6 A
GS
= 250 µA
DS(on)max,
= 0
C
= 125 °C
GS
= 0
1000
Min.
Min.
Min.
3
0.66
300
30
Max Value
2900
700
Typ.
Typ.
Typ.
7.3
275
1.3
1.6
27
4
Max.
±100
Max.
Max.
1.45
50
1
5
°C/W
°C/W
Unit
Unit
Unit
Unit
mJ
°C
µA
µA
nA
pF
pF
pF
A
V
V
S