STP50NE10 STMicroelectronics, STP50NE10 Datasheet - Page 8
![MOSFET N-CH 100V 50A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP50NE10
Manufacturer Part Number
STP50NE10
Description
MOSFET N-CH 100V 50A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP50NE10.pdf
(12 pages)
Specifications of STP50NE10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
27 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
166nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-2644-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP50NE10
Manufacturer:
ST
Quantity:
6 000
Company:
Part Number:
STP50NE10
Manufacturer:
ON
Quantity:
20 000
Part Number:
STP50NE10
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STP50NE10L
Manufacturer:
ST
Quantity:
2 000
Company:
Part Number:
STP50NE10L
Manufacturer:
ST
Quantity:
2 000
Test circuit
3
8/12
Figure 12. Switching times test circuit for
Figure 14. Test circuit for inductive load
Figure 16. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 13. Gate charge test circuit
Figure 15. Unclamped Inductive load test
Figure 17. Switching time waveform
circuit
STP50NE10