STP50NE10 STMicroelectronics, STP50NE10 Datasheet - Page 4

• Manufacturer Part Number: STP50NE10
• Description: MOSFET N-CH 100V 50A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP50NE10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 27 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 166nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-2644-5

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
C
I
I
C
DS(on)
C
Q
GS(th)
d(on)
Q
DSS
GSS
fs
Q
oss
t
iss
rss
gs
gd
r
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on Delay Time
Rise Time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
I
V
V
R
(see Figure 12)
V
V
I
V
V
V
V
V
D
D
GS
DS
DS
DD
DD
GS
GS
G
DS
DS
DS
= 25A
= 250 µA, V
= 4.7Ω, V
=80V, I
= V
= 10V, I
> ID(on) x RDS(on)max
=25V, f=1 MHz, V
=10V
Test condictions
= Max rating,
= Max rating @125°C
= ±20V
= 50V, I
Test condictions
GS
, I
D
D
D
D
= 50A
= 25A
GS
= 250µA
= 25A,
GS
= 10V
= 0
GS
=0
,
Min.
100
2
Min. Typ. Max.
20
0.021 0.027
Typ.
3
4350
5000
175
100
123
35
25
24
47
±
Max.
STP50NE10
6000
10
100
675
238
135
166
1
4
34
Unit
Unit
µA
µA
nA
nC
nC
nC
V
V
pF
pF
pF
Ω
ns
ns
S