IRF7492 International Rectifier, IRF7492 Datasheet - Page 5

• Manufacturer Part Number: IRF7492
• Description: MOSFET N-CH 200V 3.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7492

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1820pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7492

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100
0.1
4.0
3.0
2.0
1.0
0.0
10
0.0001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
Ambient Temperature
50
T
A
(THERMAL RESPONSE)
, Ambient Temperature (°C)
0.001
SINGLE PULSE
75
100
0.01
125
t , Rectangular Pulse Duration (sec)
1
150
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
1
t
d(on)
1. Duty factor D =
2. Peak T
Notes:
t
r
≤ 0.1 %
≤ 1
10
J
= P
DM
x Z
t / t
1
thJA
t
IRF7492
d(off)
P
2
DM
+ T
100
t
A
f
t
1
t
2
+
-
5
1000