IRF7492 International Rectifier, IRF7492 Datasheet - Page 2
![MOSFET N-CH 200V 3.7A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7492
Manufacturer Part Number
IRF7492
Description
MOSFET N-CH 200V 3.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7492TR.pdf
(8 pages)
Specifications of IRF7492
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
79 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
1820pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7492
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7492
Manufacturer:
BORADCOM
Quantity:
2
Company:
Part Number:
IRF7492TR
Manufacturer:
IOR
Quantity:
8 078
Part Number:
IRF7492TRPBF
Manufacturer:
IR
Quantity:
20 000
Diode Characteristics
IRF7492
Dynamic @ T
Avalanche Characteristics
Static @ T
E
I
BV
∆V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
AR
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
fs
AS
DS(on)
GS(th)
SD
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
2
(BR)DSS
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Leakage Current
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.5
Min. Typ. Max. Units
7.9
Min. Typ. Max. Units
–––
–––
–––
–––
–––
0.20
1820 –––
–––
–––
–––
–––
–––
––– -100
–––
190
780
150
–––
–––
–––
200
9.2
64
39
15
15
13
27
14
94
89
69
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
310
1.3
2.3
79
10
59
30
V/°C
mΩ
µA
nA
nC
ns
pF
nC
ns
V
V
S
V
Typ.
–––
–––
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 2.2A
= 2.2A
= 25°C, I
= 25°C, I
= 6.5Ω
= V
= 160V, V
= 160V, V
= 50V, I
= 100V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 100V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 2.2A, V
= 2.2A
= 250µA
= 2.2A
= 3.7A
GS
GS
= 0V to 160V
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
130
4.4
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
G
= 0V
= 125°C
Units
mJ
A
S
D