IRF7492 International Rectifier, IRF7492 Datasheet - Page 2

• Manufacturer Part Number: IRF7492
• Description: MOSFET N-CH 200V 3.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7492

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 79 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1820pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7492

Diode Characteristics
IRF7492
Dynamic @ T
Avalanche Characteristics
Static @ T
E
I
BV
∆V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
AR
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
fs
AS
DS(on)
GS(th)
SD
iss
oss
rss
oss
oss
oss
g
gs
gd
rr
2
(BR)DSS
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Leakage Current
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.5
Min. Typ. Max. Units
7.9
Min. Typ. Max. Units
–––
–––
–––
–––
–––
0.20
1820 –––
–––
–––
–––
–––
–––
––– -100
–––
190
780
150
–––
–––
–––
200
9.2
64
39
15
15
13
27
14
94
89
69
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
310
1.3
2.3
79
10
59
30
V/°C
mΩ
µA
nA
nC
ns
pF
nC
ns
V
V
S
V
Typ.
–––
–––
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ƒ
Reference to 25°C, I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 2.2A
= 2.2A
= 25°C, I
= 25°C, I
= 6.5Ω
= V
= 160V, V
= 160V, V
= 50V, I
= 100V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 100V
= 10V ƒ
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 2.2A, V
= 2.2A
= 250µA
= 2.2A
= 3.7A
GS
GS
= 0V to 160V …
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
130
4.4
= 0V
= 0V, T
D
www.irf.com
= 1mA ƒ
GS
ƒ
J
G
= 0V ƒ
= 125°C
Units
mJ
A
S
D