IRF7492 International Rectifier, IRF7492 Datasheet - Page 4
![MOSFET N-CH 200V 3.7A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7492
Manufacturer Part Number
IRF7492
Description
MOSFET N-CH 200V 3.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7492TR.pdf
(8 pages)
Specifications of IRF7492
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
79 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
1820pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7492
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7492
Manufacturer:
BORADCOM
Quantity:
2
Company:
Part Number:
IRF7492TR
Manufacturer:
IOR
Quantity:
8 078
Part Number:
IRF7492TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF7492
100000
10000
4
1000
100
0.1
100
10
10
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
V
T = 150
J
SD
V DS , Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
Forward Voltage
°
C
10
C rss
C oss
C iss
0.6
f = 1 MHZ
100
T = 25
J
0.8
V
GS
= 0 V
°
C
1000
1.0
100
0.1
10
1
12
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0
Tc = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
I D = 2.2A
V DS , Drain-to-Source Voltage (V)
Gate-to-Source Voltage
10
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 160V
V DS = 100V
V DS = 40V
20
30
100
www.irf.com
100µsec
10msec
40
1msec
1000
50