IRF1607 International Rectifier, IRF1607 Datasheet - Page 4

• Manufacturer Part Number: IRF1607
• Description: MOSFET N-CH 75V 142A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1607

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 85A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 142A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 320nC @ 10V
• Input Capacitance (ciss) @ Vds: 7750pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1607

IRF1607
4
12000
10000
8000
6000
4000
2000
1000
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 175 C
J
Coss
Crss
Ciss
V
V DS , Drain-to-Source Voltage (V)
SD
0.6
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
T = 25 C
J
1.0
= C gs + C gd , C ds
°
10
1.4
f = 1 MHZ
V
1.8
GS
SHORTED
= 0 V
2.2
100
10000
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
Fig 6. Typical Gate Charge Vs.
I =
1
D
Tc = 25°C
Tj = 175°C
Single Pulse
85A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
100
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V
V
V
DS
DS
DS
= 60V
= 37V
= 15V
200
FOR TEST CIRCUIT
SEE FIGURE
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100
100µsec
10msec
1msec
300
13
1000
400