IRF1607 International Rectifier, IRF1607 Datasheet - Page 2

• Manufacturer Part Number: IRF1607
• Description: MOSFET N-CH 75V 142A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1607

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 85A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 142A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 320nC @ 10V
• Input Capacitance (ciss) @ Vds: 7750pF @ 25V
• Power - Max: 380W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1607

IRF1607
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
V
t
Q
t
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
L
L
DSS
S
SM
rr
on
GSS
d(on)
r
d(off)
f
2
V
fs
D
S
SD
(BR)DSS
GS(th)
rr
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
Repetitive rating; pulse width limited by
Pulse width
(BR)DSS
I
T
max. junction temperature. (See fig. 11).
R
Starting T
SD
J
G
eff.
= 25 , I
175°C
85A, di/dt
/ T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 0.21mH
AS
400µs; duty cycle
= 85A, V
310A/µs, V
GS
Parameter
Parameter
=10V (See Figure 12).
DD
V
2%.
(BR)DSS
J
,
= 25°C (unless otherwise specified)
C
as C
––– 0.086 –––
––– 0.00580.0075
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
75
79
–––
Calculated continuous current based on maximum allowable
Limited by T
oss
junction temperature. Package limitation current is 75A.
avalanche performance.
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
7750 –––
1230 –––
5770 –––
1420 –––
–––
–––
–––
130
690 1040
–––
–––
–––
–––
210
–––
–––
––– -200
130
310
790
4.5
45
73
22
84
86
7.5
while V
142
–––
200
–––
–––
250
200
320
110
–––
–––
–––
–––
–––
–––
–––
1.3
Jmax
4.0
570
20
68
DS
is rising from 0 to 80% V
, see Fig.12a, 12b, 15, 16 for typical repetitive
V/°C
nC
nH
µA
nA
nC
ns
pF
ns
V
A
V
V
S
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
V
MOSFET symbol
integral reverse
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 85A
= 85A
= 25°C, I
= 25°C, I
= 1.8
= 10V, I
= 25V, I
= 75V, V
= 60V, V
= 60V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 38V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
GS
GS
= 85A, V
= 85A
Conditions
= 250µA
= 85A
= 85A
= 0V to 60V
DSS
= 1.0V, ƒ = 1.0MHz
= 60V, ƒ = 1.0MHz
= 0V
= 0V, T
.
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D
GS
= 1mA
J
= 0V
= 150°C
G
G
S
+L
D
D
S
)
S
D