IRF7703 International Rectifier, IRF7703 Datasheet - Page 5

• Manufacturer Part Number: IRF7703
• Description: MOSFET P-CH 40V 6A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7703

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5220pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.01
6.0
4.8
3.6
2.4
1.2
0.0
100
0.1
0.00001
10
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T =P
t
d(on)
Notes:
≤ 0.1 %
t
≤ 1
r
1
J
DM
x Z
1
thJC
P
2
DM
t
+ T
d(off)
10
C
t
1
t
f
t
2
-
+
5
100