IRF7703 International Rectifier, IRF7703 Datasheet - Page 3

• Manufacturer Part Number: IRF7703
• Description: MOSFET P-CH 40V 6A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7703

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5220pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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10000
0.01
100
0.001
1000
0.1
Fig 3. Typical Transfer Characteristics
0.01
10
Fig 1. Typical Output Characteristics
100
0.1
1
10
2.0
1
0.1
TOP
BOTTOM -2.7V
-V
2.5
-V DS , Drain-to-Source Voltage (V)
GS
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
, Gate-to-Source Voltage (V)
T = 150 C
J
3.0
1
20µs PULSE WIDTH
Tj = 25°C
°
3.5
T = 25 C
-2.7V
J
V
20µs PULSE WIDTH
DS
°
4.0
= -15V
10
4.5
5.0
100
1000
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
0.1
10
1
Fig 4. Normalized On-Resistance
-60 -40 -20
0.1
I =
D
TOP
BOTTOM -2.7V
-6.0A
T , Junction Temperature ( C)
-V DS , Drain-to-Source Voltage (V)
J
Vs. Temperature
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
0
1
20 40 60 80 100 120 140 160
-2.7V
20µs PULSE WIDTH
Tj = 150°C
10
V
GS
°
=
-10V
3
100