IRF7703 International Rectifier, IRF7703 Datasheet

MOSFET P-CH 40V 6A 8-TSSOP

IRF7703

Manufacturer Part Number
IRF7703
Description
MOSFET P-CH 40V 6A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7703

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 4.5V
Input Capacitance (ciss) @ Vds
5220pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Thermal Resistance
l
l
l
l
l
Description
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
P-Channel MOSFET
@T
@T
T
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
®
Power MOSFETs from International Rectifier
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
Parameter
provides the de-
ƒ
ƒ
GS
GS
ƒ
@ -10V
@ -10V
V
-40V
DSS
R
HEXFET
DS(on)
-55 to + 150
45@V
28@V
Max.
Max.
0.012
0.96
-6.0
-4.7
± 20
83
-40
-24
1.5
GS
GS
max (mW)
®
= -4.5V
IRF7703
= -10V
Power MOSFET
TSSOP-8
PD - 94221 B
-6.0A
-4.8A
Units
Units
I
W/°C
°C/W
D
°C
V
A
V
1
04/22/05

Related parts for IRF7703

IRF7703 Summary of contents

Page 1

... T Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com V DSS -40V provides the de- @ -10V GS @ -10V GS ƒ ƒ ƒ 94221 B IRF7703 ® HEXFET Power MOSFET R max (mW) I DS(on) D 28@V = -10V -6.0A GS 45@V = -4.5V -4.8A GS TSSOP-8 Max. Units -40 V -6.0 -4 ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -15V -10V 1000 -4.5V -3.7V -3.5V -3.3V 100 -3.0V BOTTOM -2. 0.1 -2.7V 0.01 20µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 1 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

-6.0A 0.03 0.02 0.01 3.0 5.0 7.0 9.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate ...

Page 7

Temperature ( °C ) Fig 15. Typical Threshold Voltage Vs. Junction Temperature www.irf.com 150 130 110 -250µ 0.00 ...

Page 8

TSSOP-8 Part Marking Information Y6HQG ) UCDTÃDTÃ6IÃDSA&&! GPUÃ8P9 ÃYY ;;<: Q6SUÃIVH7 S  96U Ã8P9 à Y6HQG T) ($"Ã2Ã$8 ($"!Ã2à A XPSFÃX FÃ!&$!Ã6GQC6IVH SD8Ã` 6SÃ8P9 Ã67Ã U8 TSSOP-8 Tape and Reel 'À€ 8 96U Ã8P9 Ã`X U67G à XPSFÃX Fà ...

Page 9

TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can ...

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