IRF7425 International Rectifier, IRF7425 Datasheet - Page 5

MOSFET P-CH 20V 15A 8-SOIC

IRF7425

Manufacturer Part Number
IRF7425
Description
MOSFET P-CH 20V 15A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7425

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 4.5V
Input Capacitance (ciss) @ Vds
7980pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7425

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15
12
0.01
9
6
3
0
100
0.1
10
0.00001
Fig 9. Maximum Drain Current Vs.
25
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
R
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
V
t
V
d(on)
GS
GS
V
1
J
DS
t
r
µs
DM
x Z
1
thJA
D.U.T.
P
2
DM
IRF7425
+ T
10
R
t
A
d(off)
D
t
1
t
2
t
f
-
+
V
DD
100
5

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