IRF7425 International Rectifier, IRF7425 Datasheet - Page 4

• Manufacturer Part Number: IRF7425
• Description: MOSFET P-CH 20V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7425

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 7980pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7425

IRF7425
4
12000
10000
100
0.1
8000
6000
4000
2000
10
1
0.2
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T = 150 C
-V
J
-V
SD
DS
0.4
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
°
GS
iss
rss
oss
C iss
C rss
C oss
=
=
=
=
0V,
C
C
C
gs
gd
ds
0.6
+ C
+ C
10
T = 25 C
J
f = 1MHz
gd ,
gd
C
°
0.8
ds
V
GS
SHORTED
= 0 V
1.0
100
1000
100
10
Fig 8. Maximum Safe Operating Area
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
D
A
J
= 25 C
= 150 C
-15A
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
DS
°
Q , Total Gate Charge (nC)
°
G
40
, Drain-to-Source Voltage (V)
1
BY R
V
V
DS
DS
80
DS(on)
=-16V
=-10V
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10
120
100us
1ms
10ms
160
100