IRF7425 International Rectifier, IRF7425 Datasheet - Page 3

• Manufacturer Part Number: IRF7425
• Description: MOSFET P-CH 20V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7425

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 7980pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7425

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1000
0.01
100
100
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1
0.1
1.0
TOP
BOTTOM
T = 150 C
-V
J
-V
1.2
DS
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
°
J
1.4
1
°
-1.0V
1.6
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
1.8
10
= -15V
°
2.0
100
2.2
1000
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
0.1
10
1
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1
I =
D
TOP
BOTTOM
-15A
-V
T , Junction Temperature ( C)
DS
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20 40 60 80 100 120 140 160
-1.0V
IRF7425
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-4.5V
3
100