IRF5800 International Rectifier, IRF5800 Datasheet - Page 6

• Manufacturer Part Number: IRF5800
• Description: MOSFET P-CH 30V 4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5800

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

6
0.20
0.16
0.12
0.08
0.04
Fig 12. Typical On-Resistance Vs.
2.0
4.0
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
6.0
8.0
I D = -4.0A
10.0
12.0
14.0
16.0
0.25
0.20
0.15
0.10
0.05
0.00
Fig 13. Typical On-Resistance Vs.
0
Drain Current
5
-I D , Drain Current (A)
V GS = -4.5V
10
V GS = -10V
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20