IRF5800 International Rectifier, IRF5800 Datasheet - Page 5

• Manufacturer Part Number: IRF5800
• Description: MOSFET P-CH 30V 4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5800

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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100
4.0
3.0
2.0
1.0
0.0
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
Case Temperature
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
( C)
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
50
40
30
20
10
0
25
Fig 10. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
50
J
Vs. Drain Current
J
DM
75
x Z
1
thJA
P
2
DM
1
+ T
100
A
t
1
TOP
BOTTOM
t
2
125
-1.8A
-2.5A
-4.0A
°
I D
10
5
150