IRF5800 International Rectifier, IRF5800 Datasheet - Page 2

MOSFET P-CH 30V 4A 6-TSOP

IRF5800

Manufacturer Part Number
IRF5800
Description
MOSFET P-CH 30V 4A 6-TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF5800

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
535pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Source-Drain Ratings and Characteristics
Electrical Characteristics @ T

I
I
V
t
Q
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
Notes:
SM
R
I
S
rr
GSS
d(on)
r
d(off)
f
DSS
V
fs
SD
2
(BR)DSS
GS(th)
rr
iss
oss
rss
g
gs
gd
DS(on)
(BR)DSS
Pulse width
Repetitive rating; pulse width limited by
max. junction temperature.
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
R
–––
–––
–––
–––
–––
-1.0
–––
–––
–––
–––
––– 11.4
–––
–––
––– 11.4
–––
–––
–––
–––
–––
–––
Surface mounted on FR-4 board, t
Starting T
-30
3.5
G
= 25 , I
0.02
–––
–––
––– 0.085
––– 0.150
–––
–––
–––
–––
––– -100
–––
535
2.3
2.2
19
16
11
24
14
94
68
J
= 25°C, L = 2.5mH
AS
-1.2
-1.0
-5.0
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
28
24
17
17
17
36
20
2.0
32
= -4.0A. (See Fig 10 )
V/°C
nC
nC
pF
ns
V
V
V
S
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs ‚
showing the
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= -4.0A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= 15 ,
= V
= -10V, I
= -24V, V
= -24V, V
= -16V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V, V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -2.0A, V
= -2.0A
D
GS
GS
GS
= -250µA
= -4.0A
= -4.0A
= -3.0A
= 0V
= 0V, T
= -10V
D
www.irf.com
= 1mA
GS
J
G
= 70°C
= 0V ‚
S
D

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