IRF3708 International Rectifier, IRF3708 Datasheet - Page 6

• Manufacturer Part Number: IRF3708
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3708

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2417pF @ 15V
• Power - Max: 87W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3708

IRF3708/3708S/3708L
I
A S
12V
Fig 15a&b. Unclamped Inductive Test circuit
V
6
GS
Fig 14a&b. Gate Charge Test Circuit
Same Type as D.U.T.
0.025
0.020
0.015
0.010
0.005
Current Regulator
.2 F
Fig 12. On-Resistance Vs. Drain Current
50K
3mA
t p
Current Sampling Resistors
0
.3 F
I
G
V
(B R )D S S
D.U.T.
and Waveform
50
I
VGS = 4.5V
D
and Waveforms
+
-
V
I D , Drain Current ( A )
DS
100
V
R G
GS
20 V
V D S
150
V
t p
G
VGS = 10V
Q
I A S
GS
D.U .T
0.0 1
L
200
Q
Charge
Q
GD
G
250
1 5 V
DRIVER
+
300
- V D D
A
0.017
0.015
0.013
0.011
0.009
0.007
600
480
360
240
120
Fig 15c. Maximum Avalanche Energy
0
Fig 13. On-Resistance Vs. Gate Voltage
2.0
25
Starting T , Junction Temperature ( C)
3.0
50
V GS, Gate -to -Source Voltage (V)
4.0
Vs. Drain Current
J
75
5.0
100
6.0
I D = 31A
7.0

125
TOP
BOTTOM
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8.0
150
9.0
20.7A
24.8A
°
I D
10A
10.0
175