IRF3708 International Rectifier, IRF3708 Datasheet - Page 4
![MOSFET N-CH 30V 62A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF3708
Manufacturer Part Number
IRF3708
Description
MOSFET N-CH 30V 62A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF3708.pdf
(11 pages)
Specifications of IRF3708
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
62A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 4.5V
Input Capacitance (ciss) @ Vds
2417pF @ 15V
Power - Max
87W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3708
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF3708
Manufacturer:
IR
Quantity:
10 000
Company:
Part Number:
IRF3708
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF3708L
Manufacturer:
IR
Quantity:
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Company:
Part Number:
IRF3708PBF
Manufacturer:
SHINDENGEN
Quantity:
20 000
Company:
Part Number:
IRF3708S
Manufacturer:
IR
Quantity:
12 500
IRF3708/3708S/3708L
4
3500
2800
2100
1400
1000
700
100
0.1
10
0
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T = 175 C
J
V
V
DS
SD
0.8
V
C
C
C
Forward Voltage
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
GS
iss
rss
oss
C oss
C rss
C iss
=
=
=
=
T = 25 C
0V,
C
C
C
J
gs
gd
ds
+ C
+ C
1.4
10
°
f = 1MHz
gd ,
gd
C
ds
2.0
SHORTED
V
GS
= 0 V
100
2.6
1000
100
10
10
1
8
6
4
2
0
0.1
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
0
T
T
Single Pulse
I =
D
C
J
= 25 C
= 175 C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
24.8A
V
DS
°
10
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
20
BY R
DS(on)
V
DS
30
= 15V
10
www.irf.com
40
1 0us
1 00us
1 ms
1 0ms
100
50