IRF3708 International Rectifier, IRF3708 Datasheet - Page 2

• Manufacturer Part Number: IRF3708
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3708

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2417pF @ 15V
• Power - Max: 87W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF3708

Diode Characteristics
IRF3708/3708S/3708L
Dynamic @ T
Avalanche Characteristics
t
Static @ T
d(off)
Symbol
E
I
Symbol
I
I
V
t
Q
t
Q
Symbol
g
Q
Q
Q
Q
t
t
t
C
C
C
R
V
V
I
I
AR
S
SM
d(on)
r
f
rr
rr
DSS
GSS
fs
SD
V
AS
iss
oss
rss
rr
rr
(BR)DSS
DS(on)
GS(th)
g
gs
gd
oss
2
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Diode Forward Voltage
J
Static Drain-to-Source On-Resistance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Min.
–––
–––
–––
–––
–––
–––
–––
–––
0.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
30
Min. Typ. Max. Units
–––
–––
––– 0.88
––– 0.80 –––
–––
–––
–––
–––
49
2417 –––
0.028
17.6
Typ.
–––
–––
14.5
–––
707
–––
–––
–––
–––
–––
–––
6.7
5.8
7.2
3.7
41
64
43
70
9.5
24
14
50
52
8
248
105
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
62
96
65
21
Max. Units
–––
62
-200
12.0
13.5 m
–––
100
200
2.0
29
20
V/°C Reference to 25°C, I
nC
nC
nC
ns
pF
ns
ns
µA
nA
V
S
V
V
A
Typ.
–––
–––
MOSFET symbol
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
integral reverse
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
V
V
V
V
V
V
I
D
D
J
J
J
J
DS
DS
GS
GS
DD
G
GS
GS
DS
GS
GS
GS
GS
DS
DS
DS
GS
GS
= 24.8A
= 25°C, I
= 125°C, I
= 24.8A
= 25°C, I
= 125°C, I
= 0.6
= 15V, I
= 15V
= 15V
= 4.5V
= 0V, I
= 15V
= 4.5V
= 0V
= V
= 24V, V
= 24V, V
= 0V, I
= 10V, I
= 4.5V, I
= 2.8V, I
= 12V
= -12V
GS
, I
D
D
S
F
D
ƒ
D
D
Conditions
S
F
= 24.8A, V
= 31A, V
= 250µA
D
D
Conditions
ƒ
= 31A, V
GS
GS
Conditions
= 50A
= 15A
= 250µA
= 31A, V
= 31A, V
= 12A
= 7.5A
Max.
213
= 0V
= 0V, T
ƒ
ƒ
62
D
www.irf.com
GS
R
= 1mA
ƒ
=20V
GS
R
ƒ
DS
J
ƒ
=20V
= 0V
= 125°C
G
= 0V
= 15V
Units
mJ
ƒ
ƒ
A
S
D