IRF7601TR International Rectifier, IRF7601TR Datasheet - Page 5

• Manufacturer Part Number: IRF7601TR
• Description: MOSFET N-CH 20V 5.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7601TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 15V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7601TR; IRF7601; IRF7601CT

100
0.1
10
0.00001
1
4.5V
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
D = 0.50
0.20
0.10
0.05
0.02
0.01
V
12V
G
V
GS
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Same Type as D.U.T.
Q
Current Regulator
GS
.2 F
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
50K
3mA
Current Sampling Resistors
.3 F
Q
Charge
Q
GD
G
I
G
0.001
D.U.T.
I
D
t , Rectangular Pulse Duration (sec)
1
+
-
V
DS
0.01
0.1
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
4.5V
V
GS
t
d(on)
V
1
J
DS
t
µs
r
DM
x Z
1
thJA
D.U.T.
P
2
DM
+ T
R
10
D
A
t
t
1
IRF7601
d(off)
t
2
t
f
+
-
V
DD
100