IRF7601TR International Rectifier, IRF7601TR Datasheet - Page 2

• Manufacturer Part Number: IRF7601TR
• Description: MOSFET N-CH 20V 5.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7601TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 15V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7601TR; IRF7601; IRF7601CT

Notes:
Electrical Characteristics @ T
IRF7601
Source-Drain Ratings and Characteristics
I
I
V
t
Q
R
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
SM
S
rr
GSS
d(on)
r
d(off)
f
DSS
V
(BR)DSS
DS(on)
GS(th)
fs
SD
iss
oss
rss
rr
g
gs
gd
T
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
J
150°C
3.8A, di/dt
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Gate-to-Source Reverse Leakage
96A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
0.70
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.024 –––
–––
–––
–––
6.1
20
Pulse width
Surface mounted on FR-4 board, t
–––
–––
–––
––– -100
150
–––
––– 0.035
––– 0.050
–––
–––
–––
–––
–––
650
300
2.0
6.3
5.1
51
69
14
47
24
32
100
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
1.8
1.2
1.0
3.0
9.5
30
77
25
22
300µs; duty cycle
V/°C
nC
nC
µA
ns
pF
ns
nA
V
V
V
S
A
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 3.8A
= 3.8A
= 25°C, I
= 25°C, I
= 6.2
= 2.6
= V
= 10V, I
= 16V, V
= 16V, V
= 16V
= 15V
= 0V, I
= 4.5V, I
= 2.7V, I
= -12V
= 12V
= 4.5V, See Fig. 6 and 9
= 10V
= 0V
GS
, I
D
See Fig. 10
S
F
D
D
Conditions
2%.
= 250µA
D
D
GS
GS
= 3.8A, V
= 3.8A
= 250µA
= 1.9A
= 3.8A
= 1.9A
= 0V
= 0V, T
10sec.
Conditions
D
= 1mA
GS
J
= 125°C
= 0V
G
D
S