IRF7601TR International Rectifier, IRF7601TR Datasheet - Page 3

• Manufacturer Part Number: IRF7601TR
• Description: MOSFET N-CH 20V 5.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7601TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 15V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7601TR; IRF7601; IRF7601CT

1 0 0
100
0 . 1
0.1
1 0
10
1
1
1 . 5
0.1
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
T = 1 5 0 °C
TOP
BOTT OM 1.5V
J
V
V
T = 2 5 °C
G S
D S
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
J
2 . 0
, Ga te-to-S o urce V oltage (V )
, Drain-to-Source V oltage (V)
1.5 V
2 . 5
1
V
2 0 µ s PU L SE W ID TH
20 µs P U LSE W IDTH
T = 25 °C
D S
J
= 1 0 V
3 . 0
3 . 5
10
A
A
100
0.1
2.0
1.5
1.0
0.5
0.0
10
1
Fig 4. Normalized On-Resistance
0.1
-60
Fig 2. Typical Output Characteristics
TOP
BOTT OM 1.5V
I
D
-40
= 3 .8A
T , Junction Temperature (°C )
V
-20
J
D S
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
Vs. Temperature
, Drain-to-Source V oltage (V)
0
20
40
1
60
IRF7601
1.5V
20 µs P U LSE W IDTH
T = 15 0°C
J
80
100 120 140 160
V
G S
= 4.5 V
10
A
A