IRF7663 International Rectifier, IRF7663 Datasheet - Page 5

• Manufacturer Part Number: IRF7663
• Description: MOSFET P-CH 20V 8.2A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7663

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 5V
• Input Capacitance (ciss) @ Vds: 2520pF @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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100
9.0
7.5
6.0
4.5
3.0
1.5
0.0
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
t , Rectangular Pulse Duration (sec)
1
125
°
0.01
150
0.1
300
240
180
120
60
0
25
Fig 10. Maximum Avalanche Energy
1. Duty factor D = t / t
2. Peak T = P
Starting T , Junction Temperature ( C)
Notes:
50
1
J
Vs. Drain Current
J
DM
x Z
75
1
thJC
P
2
DM
+ T
10
IRF7663
C
t
100
1
t
TOP
BOTTOM
2
125
100
-1.6A
-2.9A
-3.6A
°
I D
5
150