IRF7663 International Rectifier, IRF7663 Datasheet - Page 4

• Manufacturer Part Number: IRF7663
• Description: MOSFET P-CH 20V 8.2A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7663

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.2A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 5V
• Input Capacitance (ciss) @ Vds: 2520pF @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7663
4
4000
3000
2000
1000
100
0
10
1
0.5
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
Drain-to-Source Voltage
Crss
Ciss
Coss
-V
-V DS , Drain-to-Source Voltage (V)
SD
1.0
,Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T = 25 C
1.5
J
10
°
f = 1 MHZ
T = 150 C
J
2.0
V
GS
SHORTED
°
= 0 V
2.5
100
1000
100
10
10
1
8
6
4
2
0
0.1
0
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
-6.0A
Gate-to-Source Voltage
-V
DS
°
10
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
20
BY R
V
DS(on)
DS
FOR TEST CIRCUIT
= -10V
30
SEE FIGURE
www.irf.com
10
10us
100us
1ms
10ms
40
13
100
50