IRF7663 International Rectifier, IRF7663 Datasheet - Page 2
![MOSFET P-CH 20V 8.2A MICRO8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7663
Manufacturer Part Number
IRF7663
Description
MOSFET P-CH 20V 8.2A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7663.pdf
(7 pages)
Specifications of IRF7663
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.2A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 5V
Input Capacitance (ciss) @ Vds
2520pF @ 10V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7663
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7663TRPBF
Manufacturer:
INFINEON
Quantity:
3 001
IRF7663
Source-Drain Ratings and Characteristics
Notes:
Electrical Characteristics @ T
I
I
V
t
Q
SM
S
rr
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
d(on)
r
d(off)
f
2
I
SD
rr
DSS
Repetitive rating; pulse width limited by
V
fs
(BR)DSS
GSS
Pulse width 300µs; duty cycle 2%.
GS(th)
oss
rss
max. junction temperature.
g
gs
gd
iss
DS(on)
(BR)DSS
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
R
When mounted on 1 inch square copper board, t<10 sec
Starting T
Min. Typ. Max. Units
–––
G
–––
–––
–––
–––
-0.60 –––
Min. Typ. Max. Units
14.5
–––
–––
––– -0.01 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2520 –––
–––
–––
-20
= 25 , I
–––
–––
–––
70
50
–––
––– -100
–––
375
–––
––– 0.020
––– 0.040
–––
–––
100
125
172
615
5.0
7.0
30
11
J
AS
= 25°C, L = 17.8mH
= -3.6A. (See Figure 10)
-1.2
105
-66
-1.8
10.5
75
–––
-1.2
–––
-1.0
–––
–––
–––
–––
–––
–––
-25
100
7.5
45
V/°C
nC
ns
µA
V
nA
nC
ns
pF
A
V
V
S
p-n junction diode.
T
T
di/dt = 100A/µs
MOSFET symbol
showing the
integral reverse
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
J
J
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= 25°C, I
= -6.0A
= -6.0A
= 6.2
= 1.64
= 0V, I
= -10V, I
= -16V, V
= -16V, V
= -10V
= -10V
= -10V
= -4.5V, I
= -2.5V, I
= V
= -12V
= 12V
= -5.0V
= 0V
GS
Conditions
, I
F
S
D
Conditions
= -2.5A
D
= -7.0A, V
= -250uA
D
D
D
GS
GS
= -250µA
= -7.0A
= -7.0A
= -5.1A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
= 0V
G
D
S