BUK7624-55A,118 NXP Semiconductors, BUK7624-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7624-55A,118
• Description: MOSFET N-CH 55V 47A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7624-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934056286118; BUK7624-55A /T3; BUK7624-55A /T3

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 08029
Product specification
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-a)
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
7.1 Transient thermal impedance
Z th(j-mb)
(K/W)
10 -1
10 -2
10
1
10 -6
= 0.5
10 -5
Rev. 02 — 01 March 2001
10 -4
BUK7524-55A; BUK7624-55A
Conditions
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Figure 4
10 -3
10 -2
P
TrenchMOS™ standard level FET
10 -1
t p
T
t p (s)
=
03nb75
t p
T
© Philips Electronics N.V. 2001. All rights reserved.
t
1
Value
60
50
1.4
Unit
K/W
K/W
K/W
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