BUK7624-55A,118 NXP Semiconductors, BUK7624-55A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7624-55A,118
• Description: MOSFET N-CH 55V 47A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7624-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934056286118; BUK7624-55A /T3; BUK7624-55A /T3

Philips Semiconductors
9397 750 08029
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
function of mounting base temperature.
P der
= 25 C; I
(%)
=
----------------------
P
120
100
tot 25 C
80
60
40
20
P
0
tot
0
DM
25
single pulse.
100%
I D
(A)
50
10 3
10 2
10
1
75
1
P
100
t p
R DSon = V DS / I D
T
125
150
=
T mb ( o C)
t p
T
t
175
03na19
200
Rev. 02 — 01 March 2001
BUK7524-55A; BUK7624-55A
D.C.
Fig 2. Normalized continuous drain current as a
10
V
I
der
GS
function of mounting base temperature.
I der
=
(%)
4.5 V
------------------ -
I
D 25 C
120
100
80
60
40
20
I
0
D
0
V DS (V)
25
100%
TrenchMOS™ standard level FET
50
75
t p = 10 us
100 us
1 ms
10 ms
100 ms
03nb74
100
© Philips Electronics N.V. 2001. All rights reserved.
10 2
125
150
T mb ( o C)
175
03aa24
200
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