PSMN005-55P,127 NXP Semiconductors, PSMN005-55P,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN005-55P,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-55P,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 5V
• Input Capacitance (ciss) @ Vds: 6500pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055638127; PSMN005-55P; PSMN005-55P

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
Fig.13. Typical turn-on gate-charge characteristics.
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
IF/A
I
F
100
0
80
60
40
20
Gate-source voltage, VGS (V)
= f(V
0
ID = 75 A
0
Tj = 25 C
Fig.14. Typical reverse diode current.
25
0.1
SDS
50
); conditions: V
0.2
0.3
75
Gate charge, QG (nC)
VDD = 11 V
V
0.4
100
GS
Tj/C =
= f(Q
0.5
VSDS/V
125
GS
0.6
G
150
= 0 V; parameter T
175
VDD = 44 V
)
0.7
175
0.8
200
0.9
25
225
1
1.1
250
j
(TM)
7
transistor
avalanche current (I
100
10
1
0.001
Fig.15. Maximum permissible non-repetitive
Maximum Avalanche Current, I
unclamped inductive load
0.01
Tj prior to avalanche = 150 C
Avalanche time, t
AS
) versus avalanche time (t
0.1
AS
(A)
PSMN005-55B;
PSMN005-55P
AV
(ms)
Product specification
1
25 C
Rev 1.200
10
AV
);