BUK9608-55,118 NXP Semiconductors, BUK9608-55,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9608-55,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9608-55,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 187W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934045270118; BUK9608-55 /T3; BUK9608-55 /T3

Philips Semiconductors
April 1998
TrenchMOS
Logic level FET
15
10
ID/A
Fig.5. Typical output characteristics, T
I
5
0
100
ID/A
D
Fig.6. Typical on-state resistance, T
100
80
60
40
20
0
RDS(ON) / mOhm
80
60
40
20
0
= f(V
0
0
10
0
Fig.7. Typical transfer characteristics.
GS
VGS / V =
20
) ; conditions: V
3.4
4.0
R
I
DS(ON)
D
2
= f(V
1
40
= f(I
transistor
DS
VGS/V
); parameter V
Tj/C =
4
D
); parameter V
3
ID / A
60
VDS/V
DS
2
= 25 V; parameter T
175
6
80
3.2
VGS/V =
25
GS
3
GS
j
8
100
j
= 25 ˚C .
BUK9508-55
= 25 ˚C .
3.4
3.2
3.0
2.8
2.6
2.4
2.2
3.6
10
4
5
120
10
4
j
4
Fig.9. Normalised drain-source on-state resistance.
gfs/S
a = R
120
110
100
V
2.5
1.5
0.5
Fig.8. Typical transconductance, T
90
80
70
60
50
40
30
20
10
2.5
1.5
0.5
2
1
0
-100
0
GS(TO)
-100
2
1
0
VGS(TO) / V
a
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
-50
-50
/R
= f(I
20
DS(ON)25 ˚C
j
); conditions: I
BUK959-60
D
); conditions: V
0
0
Tmb / degC
40
= f(T
Tj / C
50
50
ID/A
Rds(on) normlised to 25degC
j
); I
D
= 1 mA; V
D
60
100
= 25 A; V
100
DS
Product specification
= 25 V
BUK9608-55
150
BUK959-60
j
150
80
= 25 ˚C .
DS
GS
= V
Rev 1.000
= 5 V
200
200
GS
100