BUK9508-55A,127 NXP Semiconductors, BUK9508-55A,127 Datasheet - Page 3

• Manufacturer Part Number: BUK9508-55A,127
• Description: MOSFET N-CH 55V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9508-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 5V
• Input Capacitance (ciss) @ Vds: 6021pF @ 25V
• Power - Max: 253W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 125 A
• Power Dissipation: 253 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 167 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 175 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055644127; BUK9508-55A; BUK9508-55A

Philips Semiconductors
9397 750 09573
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
(%)
P
I D
T
(A)
120
10 3
10 2
der
mb
10
80
40
1
0
function of mounting base temperature.
10 -1
= 25 C; I
0
=
---------------------- -
P
tot 25 C
P
tot
DM
50
single pulse.
100%
100
150
Capped at 75 A due to package
Limit R DSon = V DS /I D
T mb
1
03na19
C)
200
Rev. 03 — 6 May 2002
Fig 2. Continuous drain current as a function of
I D
V
(A)
150
100
GS
50
0
mounting base temperature.
25
4.5 V
Capped at 75 A due to package
10
50
DC
75
BUK95/9608-55A
100
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
125
V DS (V)
150
t p = 10 µs
100 µs
1 ms
10 ms
100 ms
175
T mb (ºC)
03ni50
03ni52
10 2
200
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