IRF540,127 NXP Semiconductors, IRF540,127 Datasheet - Page 8
![MOSFET N-CH 100V 23A TO-220AB](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
IRF540,127
Manufacturer Part Number
IRF540,127
Description
MOSFET N-CH 100V 23A TO-220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.IRF540127.pdf
(9 pages)
Specifications of IRF540,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
77 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1187pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-1160-5
934055542127
934055542127
Philips Semiconductors
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 1999
N-channel TrenchMOS
discharge during transport or handling.
Fig.16. SOT404 surface mounting package. Centre pin connected to mounting base.
Plastic single-ended surface mounted package (Philips version of D
(one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
transistor
0.64
0.46
c
max.
1
D
11
e
JEDEC
E
1.60
1.20
D 1
2
e
REFERENCES
10.30
9.70
E
3
0
b
2.54
e
scale
EIAJ
2.5
8
2.90
2.10
L p
5 mm
15.40
14.80
H D
mounting
2.60
2.20
2
Q
base
-PAK); 3 leads
L p
A 1
Q
PROJECTION
c
EUROPEAN
A
ISSUE DATE
98-12-14
99-06-25
IRF540, IRF540S
SOT404
Product specification
Rev 1.100