IRF540,127 NXP Semiconductors, IRF540,127 Datasheet - Page 7
![MOSFET N-CH 100V 23A TO-220AB](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
IRF540,127
Manufacturer Part Number
IRF540,127
Description
MOSFET N-CH 100V 23A TO-220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.IRF540127.pdf
(9 pages)
Specifications of IRF540,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
77 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1187pF @ 25V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-1160-5
934055542127
934055542127
Philips Semiconductors
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
August 1999
N-channel TrenchMOS
discharge during transport or handling.
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
OUTLINE
VERSION
Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
transistor
L 2
D 1
(1)
b 1
0.7
0.4
c
TO-220
JEDEC
15.8
15.2
1
e
D
E
P
REFERENCES
2
e
6.4
5.9
D 1
0
3
b
10.3
9.7
E
L 1
q
scale
EIAJ
7
5
2.54
e
10 mm
15.0
13.5
L
3.30
2.79
L 1
L 2
max.
Q
3.0
(1)
A
A 1
PROJECTION
3.8
3.6
c
EUROPEAN
P
3.0
2.7
q
2.6
2.2
Q
IRF540, IRF540S
ISSUE DATE
97-06-11
Product specification
SOT78
Rev 1.100