SI5858DU-T1-E3 Vishay, SI5858DU-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI5858DU-T1-E3
• Description: MOSFET N-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5858DU-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5858DU-T1-E3TR

Document Number: 73460
S–51931—Rev. A, 12-Sep-05
0.01
0.01
0.1
0.1
2
1
2
1
10
10
–4
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
Duty Cycle = 0.5
0.2
Single Pulse
10
0.02
–3
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
–3
10
–2
_
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
New Product
10
–1
10
–2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
–1
– T
t
A
1
= P
t
2
Vishay Siliconix
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 87_C/W
Si5858DU
www.vishay.com
600
1
7