SI5858DU-T1-E3 Vishay, SI5858DU-T1-E3 Datasheet
SI5858DU-T1-E3
Specifications of SI5858DU-T1-E3
Related parts for SI5858DU-T1-E3
SI5858DU-T1-E3 Summary of contents
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... KA 20 0.375 @ 1 A PowerPAKr ChipFETr Dual Bottom View Ordering Information: Si5858DU-T1–E3 (Lead (Pb) Free) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T Continuous Drain Current (T = 150_C) (MOSFET) = 150_C) (MOSFET Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) ...
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... Si5858DU Vishay Siliconix Parameter b, f Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Case (Drain) (Schottky) Notes a. Package limited. b. Surface Mounted on FR4 Board sec See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated result of the singulation process in manufacturing ...
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... S–51931—Rev. A, 12-Sep-05 New Product Symbol Test Condition = 1 –2 A, di/dt = 100 A/ms –2 A di/dt = 100 A/ Symbol Test Condition 125_C 85_C 125_C Si5858DU Vishay Siliconix Min Typ Max 14.8 20 0.8 1 Min Typ Max 0.34 0.375 0.255 0.290 0.05 0.500 100 90 www.vishay.com Unit Unit ...
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... Si5858DU Vishay Siliconix Output Characteristics thru 2 0.0 0.5 1.0 1.5 V – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current and Gate Voltage 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0. – Drain Current (A) D Gate Charge 4 – Total Gate Charge (nC) g www.vishay.com 4 New Product ...
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... DM *Limited by r DS(on) I limited D(on 0 25_C A Single Pulse BVDSS limited 0.01 0 – Drain-to-Source Voltage ( minimum which DS(on) Si5858DU Vishay Siliconix On-Resistance vs. Gate-to-Source Voltage 0. 0.07 0.06 125_C 0.05 25_C 0.04 0. – Gate-to-Source Voltage (V) GS Single Pulse Power, Junction-to-Ambient 0.001 0.01 0.1 ...
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... Si5858DU Vishay Siliconix Current De-Rating Package Limited 100 T – Case Temperature (_C) C *The power dissipation P is based 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for D J(max) cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. ...
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... Single Pulse 0.01 –4 10 Document Number: 73460 S–51931—Rev. A, 12-Sep-05 New Product _ –2 – Square Wave Pulse Duration (sec) –3 – Square Wave Pulse Duration (sec) Si5858DU Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 87_C/W thJA ( – ...
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... Si5858DU Vishay Siliconix Reverse Current vs. Junction Temperature 100.0 10.0 1 0.1 0. 0.001 0.0001 –50 – – Junction Temperature (_C) J www.vishay.com 8 New Product _ 75 100 125 150 Capacitance 600 500 400 300 200 100 – Reverse Voltage (V) KA Forward Voltage Drop 150_C 25_C ...
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... S–51931—Rev. A, 12-Sep-05 New Product _ –2 – Square Wave Pulse Duration (sec) –2 – Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si5858DU Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 93_C/W ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...