SI5858DU-T1-E3 Vishay, SI5858DU-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI5858DU-T1-E3
• Description: MOSFET N-CH 20V 6A PPAK CHIPFET
• Manufacturer: Vishay

Specifications of SI5858DU-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 8V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFet Dual
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5858DU-T1-E3TR

www.vishay.com
6
Si5858DU
Vishay Siliconix
*The power dissipation P
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
15
12
9
6
3
0
0
25
Package Limited
D
T
Current De-Rating*
C
is based on T
50
– Case Temperature (_C)
75
J(max)
100
= 150_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
125
_
150
New Product
10
8
6
4
2
0
25
50
T
C
– Case Temperature (_C)
Power De-Rating
75
S–51931—Rev. A, 12-Sep-05
100
Document Number: 73460
125
150