SI5482DU-T1-E3 Vishay, SI5482DU-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5482DU-T1-E3
• Description: MOSFET N-CH 30V 12A PPAK CHIPFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5482DU-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1610pF @ 15V
• Power - Max: 31W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFET Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5482DU-T1-E3TR

Si5482DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1.4
1.2
1.0
0.8
0.6
0.4
10
40
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
I
D
75
= 250 µA
0.8
0.01
100
0.1
T
10
J
100
1
0.1
= 25 °C
* V
Safe Operating Area, Junction-to-Ambient
1.0
125
GS
Limited by R
> minimum V
V
1.2
150
DS
- Drain-to-Source Voltage (V)
DS(on)
Single Pulse
1
T
A
GS
= 25 °C
*
at which R
DS(on)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
10
BVDSS Limited
10
40
30
20
50
0.001
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 ms
100 µs
10 ms
1 s
0.01
1 ms
DC
10 s
T
A
2
100
V
= 25 °C
GS
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
1
S-81448-Rev. B, 23-Jun-08
Document Number: 73594
T
A
= 125 °C
6
10
I
D
= 7.4 A
8
100
1000
10