SI5482DU-T1-E3 Vishay, SI5482DU-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5482DU-T1-E3
• Description: MOSFET N-CH 30V 12A PPAK CHIPFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5482DU-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 7.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Input Capacitance (ciss) @ Vds: 1610pF @ 15V
• Power - Max: 31W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® ChipFET Single
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5482DU-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73594
S-81448-Rev. B, 23-Jun-08
0.018
0.016
0.010
0.014
0.012
40
32
24
16
10
On-Resistance vs. Drain Current and Gate Voltage
8
0
8
6
4
2
0
0.0
0
0
I
D
= 11.1 A
5
0.5
8
V
DS
Output Characteristics
Q
10
- Drain-to-Source Voltage (V)
g
1.0
I
V
- Total Gate Charge (nC)
V
D
GS
GS
- Drain Current (A)
V
Gate Charge
16
DS
= 4.5 V
15
= 10 thru 3 V
= 15 V
1.5
V
V
DS
20
GS
24
V
= 24 V
= 10 V
GS
2.0
= 2 V
25
32
2.5
30
3.0
40
35
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
- 25
5
0.5
V
V
Transfer Characteristics
DS
GS
C
0
T
J
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
T
Capacitance
25
C
1.0
= 25 °C
C
iss
T
C
50
15
Vishay Siliconix
= 125 °C
1.5
75
Si5482DU
20
www.vishay.com
100
T
2.0
C
25
= - 55 °C
125
150
2.5
30
3