SI5482DU Vishay, SI5482DU Datasheet

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SI5482DU

Manufacturer Part Number
SI5482DU
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
Notes:
a.
b.
c.
d.
e.
f.
Document Number: 73594
S–52606—Rev. A, 02-Jan-06
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Package limited.
Surface Mounted on 1” x 1” FR4 Board.
t = 5 sec.
See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Maximum under steady state conditions is 90 _C/W.
DS
Ordering Information: Si5482DU-T1—E3 (Lead (Pb)-free)
30
30
(V)
PowerPAKr ChipFETr Single
8
0.0175 at V
7
0.015 at V
D
r
6
DS(on)
D
J
J
D
5
Bottom View
D
= 150 _C)
= 150 _C)
GS
b, f
GS
S
Parameter
Parameter
(W)
D
= 10 V
= 4.5 V
1
D
2
S
N-Channel 30-V (D-S) MOSFET
3
G
4
I
d, e
D
12
12
(A)
a
Steady State
Q
T
T
T
T
T
T
T
T
T
T
t p 5 sec
A
A
A
A
A
C
C
C
C
C
g
16 nC
16 nC
New Product
= 25 _C
= 70 _C
= 25 _C
= 25 _C
= 70 _C
= 25 _C
= 70 _C
= 25 _C
= 25 _C
= 70 _C
(Typ)
_
Marking Code
AE
XXX
Part # Code
Symbol
Symbol
D TrenchFETr Power MOSFET
D New Thermally Enhanced PowerPAKr
D Load Switch, PA Switch, and Battery Switch
T
R
R
J
V
V
I
P
P
, T
DM
thJC
I
I
I
I
thJA
ChipFETr Package
for Portable Applications
DS
GS
D
D
S
S
– Small Footprint Area
– Low On-Resistance
– Thin 0.8-mm Profile
D
D
stg
Lot Traceability
and Date Code
Typical
34
3
–55 to 150
11.1
Limit
8.8
2.6
3.1
"12
2
260
12
12
12
30
40
31
20
b, c
b, c
b, c
b, c
G
b, c
a
a
a
N-Channel MOSFET
Maximum
Vishay Siliconix
40
4
D
S
Si5482DU
www.vishay.com
Unit
Unit
_C/W
_C/W
_C
_C
W
W
RoHS
V
V
A
1

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SI5482DU Summary of contents

Page 1

... Bottom View Ordering Information: Si5482DU-T1—E3 (Lead (Pb)-free) Parameter Drain-Source Voltage Gate-Source Voltage = 150 _C) = 150 _C) Continuous Drain Current (T Continuous Drain Current ( Pulsed Drain Current Continuous Source Drain Diode Current Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si5482DU Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic ...

Page 3

... Q – Total Gate Charge (nC) g Document Number: 73594 S–52606—Rev. A, 02-Jan-06 New Product 2.0 2.5 3 Si5482DU Vishay Siliconix Transfer Characteristics 125 0.0 0.5 1.0 1.5 V – Gate-to-Source Voltage (V) GS Capacitance 2500 ...

Page 4

... Si5482DU Vishay Siliconix Source-Drain Diode Forward Voltage 40 = 150 0.0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Threshold Voltage 1.4 1.2 = 250 1.0 0.8 0.6 0.4 –50 – – Temperature (_C) J www.vishay.com 4 New Product 0.8 1.0 1.2 100 125 150 Safe Operating Area, Junction-to-Ambient 100 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73594 S–52606—Rev. A, 02-Jan-06 New Product 125 150 25 Si5482DU Vishay Siliconix Power De-Rating 50 75 100 125 150 T – Case Temperature (_C) C www.vishay.com 5 ...

Page 6

... Si5482DU Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Case 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 –4 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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