IRFI744GPBF Vishay, IRFI744GPBF Datasheet - Page 6

• Manufacturer Part Number: IRFI744GPBF
• Description: MOSFET N-CH 450V 4.9A TO220FP
• Manufacturer: Vishay

Specifications of IRFI744GPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 450V
• On Resistance Rds(on): 630mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 40W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFI744GPBF

IRFI744G, SiHFI744G
Vishay Siliconix
www.vishay.com
6
Fig. 13a - Basic Gate Charge Waveform
10 V
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S09-0012-Rev. A, 19-Jan-09
Document Number: 91157
D.U.T.
I
D
+
-
V
DS