IRFI744GPBF Vishay, IRFI744GPBF Datasheet
IRFI744GPBF
Specifications of IRFI744GPBF
Related parts for IRFI744GPBF
IRFI744GPBF Summary of contents
Page 1
... S external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The N-Channel MOSFET FULLPAK is mounted to a heatsink using a single clip single screw fixing. TO-220 FULLPAK IRFI744GPbF SiHFI744G-E3 IRFI744G SiHFI744G = 25 °C, unless otherwise noted °C ...
Page 2
... IRFI744G, SiHFI744G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...
Page 3
... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91157 S09-0012-Rev. A, 19-Jan- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFI744G, SiHFI744G Vishay Siliconix www.vishay.com 3 ...
Page 4
... IRFI744G, SiHFI744G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91157 S09-0012-Rev. A, 19-Jan-09 ...
Page 5
... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91157 S09-0012-Rev. A, 19-Jan-09 IRFI744G, SiHFI744G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms Vishay Siliconix D.U. d(off www.vishay.com 5 ...
Page 6
... IRFI744G, SiHFI744G Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91157 ...
Page 7
... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91157. Document Number: 91157 S09-0012-Rev ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...