IRFI744GPBF Vishay, IRFI744GPBF Datasheet - Page 4

• Manufacturer Part Number: IRFI744GPBF
• Description: MOSFET N-CH 450V 4.9A TO220FP
• Manufacturer: Vishay

Specifications of IRFI744GPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 4.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.9A
• Drain Source Voltage Vds: 450V
• On Resistance Rds(on): 630mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 40W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFI744GPBF

IRFI744G, SiHFI744G
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
Document Number: 91157
4
S09-0012-Rev. A, 19-Jan-09