IRFBC40AS Vishay, IRFBC40AS Datasheet - Page 4

• Manufacturer Part Number: IRFBC40AS
• Description: MOSFET N-CH 600V 6.2A D2PAK
• Manufacturer: Vishay

Specifications of IRFBC40AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 1036pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFBC40AS

IRFBC40AS
100000
4
10000
1000
100
10
100
0.1
1
10
1
0.4
1
Fig 5. Typical Capacitance Vs.
T = 150 C
Fig 7. Typical Source-Drain Diode
J
V
V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
SD
°
0.6
,Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
Ciss
Coss
Crss
0.8
T = 25 C
J
f = 1 MHZ
100
°
1.0
V
GS
SHORTED
= 0 V
1.2
1000
100
0.1
10
20
16
12
1
8
4
0
10
0
Fig 8. Maximum Safe Operating Area
T
T
Single Pulse
I =
D
Fig 6. Typical Gate Charge Vs.
C
J
= 25 C
= 150 C
5.9A
OPERATION IN THIS AREA LIMITED
V
Gate-to-Source Voltage
DS
°
Q , Total Gate Charge (nC)
8
°
G
, Drain-to-Source Voltage (V)
100
V
V
V
DS
DS
DS
16
BY R
= 480V
= 300V
= 120V
DS(on)
FOR TEST CIRCUIT
24
SEE FIGURE
10us
100us
1ms
10ms
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1000
32
13
10000
40