IRFBC40AS Vishay, IRFBC40AS Datasheet

MOSFET N-CH 600V 6.2A D2PAK

IRFBC40AS

Manufacturer Part Number

IRFBC40AS

Description

MOSFET N-CH 600V 6.2A D2PAK

Manufacturer

Vishay

Datasheets

1.IRFBC40AS.pdf (8 pages)

2.IRFBC40AS.pdf (9 pages)

3.IRFBC40AS.pdf (10 pages)

Specifications of IRFBC40AS

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.2 Ohm @ 3.7A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

6.2A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

42nC @ 10V

Input Capacitance (ciss) @ Vds

1036pF @ 25V

Power - Max

125W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFBC40AS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRFBC40AS

Manufacturer:

IR

Quantity:

12 500

Company:

H&T Electronics

H&T Electronics

Part Number:

IRFBC40ASPBF

Quantity:

15 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IRFBC40ASTRLPBF

Quantity:

70 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IRFBC40ASTRRPBF

Quantity:

70 000

Current page: 1 of 9
Download datasheet (112Kb)

l

l

l

l

Absolute Maximum Ratings

l

l

l

Typical SMPS Topology:

l

Notes

Benefits

I

I

I

P

V

dv/dt

T

T

Applications

D

D

DM

GS

J

STG

D

@ T

@ T

Avalanche Voltage and Current

Drive Requirement

dv/dt Ruggedness

www.irf.com

@T

Switch Mode Power Supply ( SMPS )

Uninterruptable Power Supply

High speed power switching

Low Gate Charge Qg results in Simple

Improved Gate, Avalanche and dynamic

Fully Characterized Capacitance and

Effective Coss Specified ( See AN 1001)

Single transistor Forward

C

C

C

= 25°C

= 100°C

= 25°C

through … are on page 9

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current †

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ƒ†

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Parameter

SMPS MOSFET

GS

GS

@ 10V†

@ 10V†

V

600V

DSS

300 (1.6mm from case )

HEXFET

-55 to + 150

Rds(on) max

IRFBC40AS

Max.

125

± 30

6.2

3.9

1.0

6.0

25

D P ak

2

1.2

®

Power MOSFET

PD- 91897A

Units

W/°C

V/ns

6.2A

°C

W

A

V

I

D

1

6/29/99

Related parts for IRFBC40AS

Related keywords

irfbc40
irfbc30
irfbc20
irfbc40a
irfbc40lc
irfbc40pbf
irfbc20pbf
IRFBC40AS datasheet
IRFBC40AS data sheet
IRFBC40AS pdf datasheet
IRFBC40AS component
IRFBC40AS part
IRFBC40AS distributor
IRFBC40AS RoHS
IRFBC40AS datasheet download