IRFBC40AS Vishay, IRFBC40AS Datasheet

IRFBC40AS

Manufacturer Part Number

IRFBC40AS

Description

MOSFET N-CH 600V 6.2A D2PAK

Manufacturer

Vishay

Datasheets

1.IRFBC40AS.pdf (8 pages)

2.IRFBC40AS.pdf (9 pages)

3.IRFBC40AS.pdf (10 pages)

Specifications of IRFBC40AS

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.2 Ohm @ 3.7A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

6.2A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

42nC @ 10V

Input Capacitance (ciss) @ Vds

1036pF @ 25V

Power - Max

125W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFBC40AS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFBC40AS

Manufacturer:

Quantity:

12 500

Company:

H&T Electronics

Part Number:

IRFBC40ASPBF

Quantity:

15 000

Company:

H&T Electronics

Part Number:

IRFBC40ASTRLPBF

Quantity:

70 000

Company:

H&T Electronics

Part Number:

IRFBC40ASTRRPBF

Quantity:

70 000

Current page: 1 of 10
Download datasheet (388Kb)

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

c. I

d. 1.6 mm from case.

e. Uses IRFBC40A, SiHFBC40A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91113

S11-1053-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

DS(on)

(Max.) (nC)

(nC)

(V)

(nC)

 6.2 A, dI/dt  88 A/μs, V

G D

()

PAK (TO-263)

= 25 °C, L = 29.6 mH, R

a, e

c, e

 V

= 10 V

= 25 , I

, T

N-Channel MOSFET

Single

SiHFBC40AS-GE3

IRFBC40ASPbF

SiHFBC40AS-E3

 150 °C.

600

PAK (TO-263)

This document is subject to change without notice.

= 6.2 A (see fig. 12).

= 25 °C, unless otherwise noted)

Power MOSFET

1.2

at 10 V

for 10 s

= 25 °C

= 100 °C

= 25 °C

FEATURES

• Halogen-free According to IEC 61249-2-21

• Low Gate Charge Q

• Improved Gate, Avalanche and Dynamic dV/dt

• Fully Characterized Capacitance and Avalanche Voltage

• Effective C

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Single Transistor Forward

Definition

Requirement

Ruggedness

and Current

SiHFBC40ASTRL-GE3

IRFBC40ASTRLPbF

SiHFBC40ASTL-E3

PAK (TO-263)

SYMBOL

IRFBC40AS, SiHFBC40AS

dV/dt

oss

, T

stg

Specified

results in Simple Drive

- 55 to + 150

LIMIT

300

SiHFBC40ASTRR-GE3

IRFBC40ASTRRPbF

SiHFBC40ASTR-E3

± 30

600

570

125

6.2

3.9

1.0

6.2

6.0

www.vishay.com/doc?91000

PAK (TO-263)

Vishay Siliconix

www.vishay.com

UNIT

W/°C

V/ns

°C

Related parts for IRFBC40AS

Related keywords

irfbc40
irfbc30
irfbc20
irfbc40a
irfbc40lc
irfbc40pbf
irfbc20pbf
IRFBC40AS datasheet
IRFBC40AS data sheet
IRFBC40AS pdf datasheet
IRFBC40AS component
IRFBC40AS part
IRFBC40AS distributor
IRFBC40AS RoHS
IRFBC40AS datasheet download