IPW60R045CP Infineon Technologies, IPW60R045CP Datasheet - Page 2

• Manufacturer Part Number: IPW60R045CP
• Description: MOSFET N-CH 650V 60A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW60R045CP

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 44A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 3.5V @ 3mA
• Gate Charge (qg) @ Vgs: 190nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 100V
• Power - Max: 431W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 431000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPW60R045CP; IPW60R045CPIN; IPW60R045CPXK; IPW60R045CSX; SP000067149